Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

Like carbon, silicon has four electrons in its outermost ... MOSFETs have a metal gate electrode atop an oxide insulator, which is itself affixed to a slice of semiconductor material.

This involves exploring various substrate technologies, including Fully Depleted Silicon-on-Insulator (FD-SOI) and high-resistivity substrates, which are designed to minimize losses and improve ...

Researchers at Osaka University in Suita, Japan, have devised a novel way to improve the performance of electronic devices. The study, published in ACS Applied Electronic ...

However, the research pointed out that the quality of the silicon/insulator interface significantly affects the mobility, suggesting that further improvements in interface quality are necessary ...

EAST FISHKILL, N.Y., Sept. 18, 2009-- IBM has successfully developed a prototype of the semiconductor industry's smallest, densest and fastest on-chip dynamic memory device in next-generation, ...