“In this roadmap we consider the status and challenges of technologies that use the properties of a rectifying metal-semiconductor interface, known as a Schottky barrier (SB), as an asset for device ...

By delivering a dramatic increase in the current density of AlN Schottky barrier diodes, the team is helping these devices to ...

This chapter examines interface states and their effect on Schottky barriers in greater depth. First, it considers the role of interface dipoles at the metal‐semiconductor interface, the different ...

Contacts. The metal–semiconductor junction in Schottky barrier devices has the crucial role of establishing a built-in potential, and a field to separate electron–hole pairs. In light of the ...

Negative capacitance has been observed in different systems such as electrolyte/electrode interfaces, semiconductor Schottky barriers and metal–insulator–metal structures, but in all these ...

Fast response of the diode is achieved by designing a Schottky barrier with a small RC product. High quantum efficiency is obtained by coupling the light through a thin metal layer into the depletion ...

We develop a first-principles method for calculating Schottky barrier parameters. The Poisson equation is solved self-consistently with the electrostatic charge density over the entire barrier using ...

The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between ...

In this module, you will learn about the simplest semiconductor device, a Schottky diode, which consists of a metal-semiconductor junction. You will apply the drift-diffusion model, solving Gauss' law ...

Modification of schottky barrier height at metal-semiconductor interfaces by the formation of interlayers combining UHV and Liquid Phase (CULP) processing of nanoparticles and interfaces soft contact ...