One of the team tried using phosphorous and indium doping and created a transistor that could work at higher frequencies. But there was a problem. Despite the transistor’s superior performance, ...

With the rapid development of advanced technologies in recent years, such as displays and transistors, interest in technologies that can precisely control doping in nanoscale semiconductors is ...

This team has created a transistor that itself is programmable. Rather than doping the semiconductor material with impurities to create the electrical characteristics needed for the transistor ...

These transistors, introduced in a paper published in Nature Electronics, were created via a fabrication strategy that leverages the doping and thickness control of two 2D materials, namely ...

The research that went into improving radar helped set the stage for post-war research into the transistor ... Trying different semiconductors and doping with different materials, the researchers ...

(Nanowerk News) Professor Jiwoong Yang and his research team at the Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST; President Kunwoo Lee) ...

In our transistors, the physical process that controls this modulation is governed by the electrochemical doping and de-doping of the channel,” said first author Duncan Wisniewski, Columbia University ...

Metal-Semiconductor Field-Effect Transistors (MESFETs ... For instance, a novel MESFET design featuring a p-type doping zone and a recessed buffer layer has demonstrated a remarkable 63.76% ...

The NMOS transistor is formed on a p-type silicon substrate (also called body). On the top center part of the device, a low resistivity electrode is formed which is separated from the body by an ...