High-resolution electron microscopy (HREM) imaging technique is a powerful tool for directly visualizing a broad range of materials in real-space. However, it faces challenges in denoising due to ...

In this letter, a novel ultrathin vertical channel (UTVC) NMOSFET with asymmetric fully overlapped lightly doped drain (LDD) is proposed and demonstrated using solid-phase epitaxy (SPE). A boron-doped ...