We report on the fabrication and study of graphene gate GaN/AlGaN fin-shaped field effect transistors. The investigated DC, noise, and sub-sub-THz properties indicate their prospective for transparent ...

We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the ...