The operation of field‐effect transistors (FETs) critically depends on the performance of gate dielectrics, which act as the insulating medium between the gate electrode and the semiconducting ...

AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they ...

Imec is a world-leading research and innovation center in nanoelectronics and digital technologies. Imec has more than 6.000 ...

In a bold challenge to silicon s long-held dominance in electronics, Penn State researchers have built the world s first working CMOS computer entirely from atom-thin 2D materials. Using ...

AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have ...

We report on the fabrication and study of graphene gate GaN/AlGaN fin-shaped field effect transistors. The investigated DC, noise, and sub-sub-THz properties indicate their prospective for transparent ...

We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel. Here, the ...

Field-effect transistors (FETs), when functionalized with proper biorecognition elements (such as antibodies or enzymes), represent a unique platform for real-time, specific, label-free transduction ...

We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The ...

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Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested ...