The team developed a two-dimensional transistor using bismuth oxyselenide. The team’s transistor has Gate-all-around technology, the latest field-effect transistor technology. It replaces FinFET.

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Optical wireless communication (OWC) has emerged as a complementary or alternative technology to the radio-frequency (RF) communication. OWC based on image sensor, which is also called optical camera ...

All the latest science news on field effect transistor from Phys.org. Find the latest news, advancements, and breakthroughs.

Graphene field effect transistor (GFET)-based biosensors have gained significant interest due to their superior stability and higher electron mobility. This article discusses the design, applications, ...

Graphene Field Effect Transistors (GFETs) show promise for future electronics. They offer high-speed performance, enhanced sensitivity, and applications in biosensing, flexible devices, and more.

Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions.

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

The team confirmed that the fabricated diamond MOSFET actually functioned as an n-channel transistor. In addition, the team verified the excellent high-temperature performance of the MOSFET as ...

New transitional metal dichalcogenide field-effect transistors were found to have low ohmic contact resistance close to the quantum limit and record-high on/off ratio.