The team developed a two-dimensional transistor using bismuth oxyselenide. The team’s transistor has Gate-all-around technology, the latest field-effect transistor technology. It replaces FinFET.

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Optical wireless communication (OWC) has emerged as a complementary or alternative technology to the radio-frequency (RF) communication. OWC based on image sensor, which is also called optical camera ...

Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with a recorded ...

All the latest science news on field-effect transistor from Phys.org. Find the latest news, advancements, and breakthroughs.

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...

Image Credit: Production Perig/Shutterstock.com An Introduction to Graphene Field Effect Transistors A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure.

"The n-type diamond MOSFETs exhibit a high field-effect mobility around 150cm2/V/sec at 573K," they said in their paper, referring to high conductivity and stability at extremely high temperatures.

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond. Advanced Science, 2024; DOI: 10.1002/advs.202306013 ...

The team confirmed that the fabricated diamond MOSFET actually functioned as an n-channel transistor. In addition, the team verified the excellent high-temperature performance of the MOSFET as ...

The research has been published in Nature Nanotechnology ("Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer").