In this letter, a pressure sensor based on the vertical tunneling graphene field-effect transistors (VTGFETs) is proposed and theoretically analyzed. The proposed sensor consists of a ...

In this paper, for the first time device characteristics of field-effect tunneling transistors based on vertical graphene-hBN heterostructure (VTGFET) and vertical graphene nanoribbon (GNR)-hBN ...

Pictured above: Schematic of HPhP electroluminescence in an hBN/graphene/hBN heterostructure. Red spheres represent drifting electrons in graphene, while yellow rays depict HPhP modes excited by these ...

A paper recently published in the journal Materials reviewed graphene/hexagonal boron nitride (hBN) heterostructure devices for the charge control and electrical tuning of color centers that form the ...

Like light, electrons in graphene have quantum mechanical wave-like properties that can be accessed in devices, making such a semiconductor a good choice for use in future quantum computers.

One of the most appealing applications of 2D hBN is the van der Waals heterostructure, created by stacking distinct 2D layers on top of each other. The construction of graphene devices on hBN ...

For example, the graphene/hBN heterostructure enables the creation of high-performance graphene-based electronic devices and is very likely to be used to fabricate atomically thin integrated circuits.

In addition to deep-UV LEDs, graphene-hBN structures could enable quantum computing devices, smaller and more efficient electronics and optoelectronics and a variety of other applications.

Graphene-hBN breakthrough to spur new LEDs, quantum computing Study uncovers first method for producing high-quality, wafer-scale, single-layer hexagonal boron nitride Peer-Reviewed Publication ...

Study uncovers first method for producing high-quality, wafer-scale, single-layer hexagonal boron nitride.