Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

Heat-resistant sensing and computing chips made of silicon carbide could advance aircraft, electric and gas-powered vehicles, renewable energy, defense and space exploration—and University of Michigan ...

A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” ...

Discover the possibilities of twisted bilayer graphene as a replacement for silicon in integrated circuits and it's potential.

GaN suppliers have taken various approaches to packaging, leading to a lack of multiple footprint-compatible sources for ...

Test your knowledge of F1 circuit layouts by correctly identifying each of the 2025 tracks solely based on a diagram of the circuit. While we can all remember the names and countries of the F1 ...

FET price dropped 20% in the past week and over 40% in a month as bearish momentum intensifies. Whales send mixed signals as mid-sized holders sell while larger investors accumulate, creating market ...

Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia ...

A landmark development led by researchers from the University of Glasgow could help create a new generation of diamond-based transistors for use in high-power electronics. Their new diamond transistor ...

School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, PR China ...

Reticle size limitations are forcing chip design teams to look beyond a single SoC or processor in order to achieve orders of magnitude improvements in processing that are required for AI. But moving ...