35 w of power was produced at 132 mc using four transistor amplifier modules in the final stage, combined by a hybrid network. The use of the hybrid system permits summing of signals with a high ...

The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...