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14d
Tech Xplore on MSNImec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiersImproved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...
RF and mmWave specialisr Filtronic has launched its latest V-band high-frequency amplifier system, Prometheus, at the ...
Quantic X-Microwave’s modular design platform enables rapid prototyping and flexible design by allowing engineers to easily ...
The design and modelling of power amplifiers are central to advancing high-frequency applications, including wireless communication, radar, and satellite systems. In these devices, accurately ...
Key milestones in GaN RF technology include unveiling the first Ka-band GaN MMIC power amplifier at the 2004 IEEE International Microwave Symposium, the first W-band GaN MMIC power amplifier at the ...
12d
Tech Xplore on MSNTiny gallium nitride transistors boost chip speed and efficiency in new 3D designThe advanced semiconductor material gallium nitride will likely be key for the next generation of high-speed communication ...
Bulk-acoustic-wave filter technology has become an essential ingredient in enhancing Wi-Fi performance by mitigating ...
Mass production for STMicroelectronics' turnkey Bluetooth/Wi-Fi modules, developed with Qualcomm, is underway.
The low-cost method adds high-speed GaN transistors directly to standard silicon chips for better performance and easy ...
IISc-incubated startup AGNIT Semiconductors is developing and manufacturing GaN-based semiconductors, challenging the country ...
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