Until 2018, DRAM peripheral transistors were predominantly made in planar logic MOSFET technology with poly-Si/SiO 2 or ...

Heat-resistant sensing and computing chips made of silicon carbide could advance aircraft, electric and gas-powered vehicles, renewable energy, defense and space exploration—and University of Michigan ...

A technical paper titled “Buried power rail to suppress substrate leakage in complementary field effect transistor (CFET)” ...

Discover the possibilities of twisted bilayer graphene as a replacement for silicon in integrated circuits and it's potential.

GaN suppliers have taken various approaches to packaging, leading to a lack of multiple footprint-compatible sources for ...

In DRAM chips, besides access transistors, peripheral transistors must meet stringent requirements which preclude a ...