This series of tutorials explains in-depth power supply design steps for the buck and the boost topology DC-DC switching regulators, supplemented by dedicated sessions on PCB layout and signal edge ...

PowerUP 2024 connects power electronics experts to discuss innovations, sustainable energy,power systems with keynotes, panels, and resources ...

Wolfspeed. Guy Moxey, VP of power development at Wolfspeed, emphasized at PCIM how SiC is transforming industrial e-mobility. SiC offers superior efficiency and power density over traditional silicon, ...

Barry Lin, CTO of Wavetek Microelectronics, noted in an exclusive interview with Power Electronics News the semiconductor industry landscape, especially for compound semiconductors, with several ...

Two compound semiconductor devices that have emerged as solutions are gallium nitride (GaN) and silicon carbide (SiC) power transistors. These devices compete with the long-lived silicon power LDMOS ...

Asynchronous motors are primarily used in low-speed applications, such as fans and pumps. Synchronous motors, on the other hand, are designed to rotate at a constant speed synchronized with the ...

A typical EV powertrain consists of a battery pack, inverters for power transfer and electric motor(s) through a final reduction drive. For hybrid vehicles and plug-in hybrid vehicles, there are ...

APEC has been a cornerstone of the power electronics industry since its inception. This year’s conference marked the 40th anniversary of APEC, which has grown significantly since its founding in 1986, ...

Diamond, along with gallium oxide (Ga 2 O 3), belongs to the class of Ultra Wide Band Gap (UWBG) semiconductors.Its dielectric breakdown strength is at least three times higher than SiC, along with a ...

The increasing demand for battery electric vehicles (BEVs) is giving impetus to a phenomenal market growth of silicon carbide products, especially MOSFETs. Were it not for such innovative ...

Where V IN is the static V DS voltage, t is the inductor charging time, L is the value of the inductor, and C oss the GaN DUT output capacitance. For a fixed t, the V DS,peak can be tuned by the value ...

If the SW switch is closed for a time t 1, at the ends of load R, there is the voltage V s.Conversely, if this switch is open for a time t 2, at the ends of load R, the voltage is 0 V.The rapid ...